One More Evidence Supporting Damage Growth Inside Silicon MEMS Structures from Comparison of Strength Affected by Cyclic Compressive Stress
Recently, dislocation in single-crystal silicon has been confirmed to be induced by fatigue. It was found that the fatigue lifetime of silicon is likely to be dominated by accumulation of crystal defects, i.e., dislocations. In previous studies, crystal d
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| Tác giả chính: | , |
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| Định dạng: | Bài trích |
| Ngôn ngữ: | eng |
| Nhà xuất bản: |
Lecture Notes in Mechanical Engineering
2021
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| Chủ đề: | |
| Truy cập trực tuyến: | https://link.springer.com/chapter/10.1007/978-3-030-69610-8_110 https://dlib.phenikaa-uni.edu.vn/handle/PNK/2734 |
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| Tóm tắt: | Recently, dislocation in single-crystal silicon has been confirmed to be induced by fatigue. It was found that the fatigue lifetime of silicon is likely to be dominated by accumulation of crystal defects, i.e., dislocations. In previous studies, crystal d |
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