Optical characterizations of lightly doped (PbS)1−x Znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems
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| Định dạng: | Sách |
| Ngôn ngữ: | English |
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Springer
2023
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| Truy cập trực tuyến: | https://link.springer.com/article/10.1007/s10854-023-11274-0 https://dlib.phenikaa-uni.edu.vn/handle/PNK/9478 |
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oai:localhost:PNK-94782023-10-05T08:21:21Z Optical characterizations of lightly doped (PbS)1−x Znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems Shokr, E. Kh. Mohamed, W. S. Adam, A. G. UV–VIS–NIR spectroscopy XRD CC-BY The lightly Zn-doped (PbS)1−x (Zn)x thin films were synthesized by the thermal deposition technique. The structure, morphology, and elemental analyses were carried out by XRD, SEM, and EDS, respectively, and characterised by UV–VIS–NIR spectroscopy. The optical absorption, transmission, and reflection have been studied and analysed. The linear and non-linear parameters have been determined, explained, and compared with the reported results. The effects of Zn-doping, film thickness, and annealing temperature on NLO-parameters have been considered. The better 2.78 × 10–10 and 2.93 × 10–10 esu values of the non-linear refractive index n2 and 3rd-order optical polarizability χ(3), respectively, were attained by (PbS)0.97 (Zn)0.03 film of 150 nm thick annealed at 200 °C. 2023-10-05T08:21:21Z 2023-10-05T08:21:21Z 2023 Book https://link.springer.com/article/10.1007/s10854-023-11274-0 https://dlib.phenikaa-uni.edu.vn/handle/PNK/9478 en application/pdf Springer |
| institution |
Digital Phenikaa |
| collection |
Digital Phenikaa |
| language |
English |
| topic |
UV–VIS–NIR spectroscopy XRD |
| spellingShingle |
UV–VIS–NIR spectroscopy XRD Shokr, E. Kh. Mohamed, W. S. Adam, A. G. Optical characterizations of lightly doped (PbS)1−x Znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems |
| description |
CC-BY |
| format |
Book |
| author |
Shokr, E. Kh. Mohamed, W. S. Adam, A. G. |
| author_facet |
Shokr, E. Kh. Mohamed, W. S. Adam, A. G. |
| author_sort |
Shokr, E. Kh. |
| title |
Optical characterizations of lightly doped (PbS)1−x Znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems |
| title_short |
Optical characterizations of lightly doped (PbS)1−x Znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems |
| title_full |
Optical characterizations of lightly doped (PbS)1−x Znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems |
| title_fullStr |
Optical characterizations of lightly doped (PbS)1−x Znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems |
| title_full_unstemmed |
Optical characterizations of lightly doped (PbS)1−x Znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems |
| title_sort |
optical characterizations of lightly doped (pbs)1−x znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems |
| publisher |
Springer |
| publishDate |
2023 |
| url |
https://link.springer.com/article/10.1007/s10854-023-11274-0 https://dlib.phenikaa-uni.edu.vn/handle/PNK/9478 |
| _version_ |
1779307185257316352 |
| score |
8.887836 |