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Optical characterizations of lightly doped (PbS)1−x Znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems

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Bibliographic Details
Main Authors: Shokr, E. Kh., Mohamed, W. S., Adam, A. G.
Format: Book
Language:English
Published: Springer 2023
Subjects:
UV–VIS–NIR spectroscopy
XRD
Online Access:https://link.springer.com/article/10.1007/s10854-023-11274-0
https://dlib.phenikaa-uni.edu.vn/handle/PNK/9478
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spelling oai:localhost:PNK-94782023-10-05T08:21:21Z Optical characterizations of lightly doped (PbS)1−x Znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems Shokr, E. Kh. Mohamed, W. S. Adam, A. G. UV–VIS–NIR spectroscopy XRD CC-BY The lightly Zn-doped (PbS)1−x (Zn)x thin films were synthesized by the thermal deposition technique. The structure, morphology, and elemental analyses were carried out by XRD, SEM, and EDS, respectively, and characterised by UV–VIS–NIR spectroscopy. The optical absorption, transmission, and reflection have been studied and analysed. The linear and non-linear parameters have been determined, explained, and compared with the reported results. The effects of Zn-doping, film thickness, and annealing temperature on NLO-parameters have been considered. The better 2.78 × 10–10 and 2.93 × 10–10 esu values of the non-linear refractive index n2 and 3rd-order optical polarizability χ(3), respectively, were attained by (PbS)0.97 (Zn)0.03 film of 150 nm thick annealed at 200 °C. 2023-10-05T08:21:21Z 2023-10-05T08:21:21Z 2023 Book https://link.springer.com/article/10.1007/s10854-023-11274-0 https://dlib.phenikaa-uni.edu.vn/handle/PNK/9478 en application/pdf Springer
institution Digital Phenikaa
collection Digital Phenikaa
language English
topic UV–VIS–NIR spectroscopy
XRD
spellingShingle UV–VIS–NIR spectroscopy
XRD
Shokr, E. Kh.
Mohamed, W. S.
Adam, A. G.
Optical characterizations of lightly doped (PbS)1−x Znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems
description CC-BY
format Book
author Shokr, E. Kh.
Mohamed, W. S.
Adam, A. G.
author_facet Shokr, E. Kh.
Mohamed, W. S.
Adam, A. G.
author_sort Shokr, E. Kh.
title Optical characterizations of lightly doped (PbS)1−x Znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems
title_short Optical characterizations of lightly doped (PbS)1−x Znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems
title_full Optical characterizations of lightly doped (PbS)1−x Znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems
title_fullStr Optical characterizations of lightly doped (PbS)1−x Znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems
title_full_unstemmed Optical characterizations of lightly doped (PbS)1−x Znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems
title_sort optical characterizations of lightly doped (pbs)1−x znx thin films influenced by film thickness and annealing temperature for applications in highly intensive radiation systems
publisher Springer
publishDate 2023
url https://link.springer.com/article/10.1007/s10854-023-11274-0
https://dlib.phenikaa-uni.edu.vn/handle/PNK/9478
_version_ 1779307185257316352
score 8.891145

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