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Photoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm

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Bibliographic Details
Main Authors: Murawski, K., Majkowycz, K., Kopytko, M.
Format: Book
Language:English
Published: Springer 2023
Subjects:
MOCVD
LWIR
Online Access:https://link.springer.com/article/10.1007/s11664-023-10516-5
https://dlib.phenikaa-uni.edu.vn/handle/PNK/9515
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spelling oai:localhost:PNK-95152023-10-10T08:04:56Z Photoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm Murawski, K. Majkowycz, K. Kopytko, M. MOCVD LWIR Cc-BY A HgCdTe photodiode grown by chemical vapor deposition (MOCVD) on a GaAs substrate operating in the long-wave infrared (LWIR) range was characterized using photoluminescence (PL) measurements. At high temperatures, the PL spectrum originates from a free-carrier emission and might be fitted by a theoretical expression being the product of the density of states and the Fermi–Dirac distribution. At low temperatures, the PL spectrum consists of multiple emission peaks that do not originate solely from the energy gap. Such spectra are not unambiguous to interpret due to the prominence of different optical transitions. Spectral response (SR) measurements were used to determine the energy gap (Eg) and extract the band-to-band transition from the PL spectra. PL peaks visible within the band gap were fitted by a Gaussian distribution. 2023-10-10T08:04:55Z 2023-10-10T08:04:55Z 2023 Book https://link.springer.com/article/10.1007/s11664-023-10516-5 https://dlib.phenikaa-uni.edu.vn/handle/PNK/9515 en application/pdf Springer
institution Digital Phenikaa
collection Digital Phenikaa
language English
topic MOCVD
LWIR
spellingShingle MOCVD
LWIR
Murawski, K.
Majkowycz, K.
Kopytko, M.
Photoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm
description Cc-BY
format Book
author Murawski, K.
Majkowycz, K.
Kopytko, M.
author_facet Murawski, K.
Majkowycz, K.
Kopytko, M.
author_sort Murawski, K.
title Photoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm
title_short Photoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm
title_full Photoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm
title_fullStr Photoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm
title_full_unstemmed Photoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm
title_sort photoluminescence study of as doped p-type hgcdte absorber for infrared detectors operating in the range up to 8 µm
publisher Springer
publishDate 2023
url https://link.springer.com/article/10.1007/s11664-023-10516-5
https://dlib.phenikaa-uni.edu.vn/handle/PNK/9515
_version_ 1779397739531993088
score 8.891145

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