Nanoscale Film Thickness Gradients Printed in Open Air by Spatially Varying Chemical Vapor Deposition

Nanoscale films are integral to all modern electronics. To optimize device performance, researchers vary the film thickness by making batches of devices, which is time-consuming and produces experimental artifacts. Thin films with nanoscale thickness gradients that are rapidly deposited in open air...

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Main Authors: Abdullah H. Alshehr, Jhi Yong Loke, Viet Huong Nguyen, Alexander Jones, Hatameh Asgarimoghaddam, Louis-Vincent Delumeau, Ahmed Shahin, Khaled H. Ibrahim, Kissan Mistry, Mustafa Yavuz, David Mu�oz-Rojas, Kevin P. Musselman
Format: Bài trích
Language:eng
Published: Advanced Functional Materials 2021
Online Access:https://onlinelibrary.wiley.com/doi/10.1002/adfm.202103271
https://dlib.phenikaa-uni.edu.vn/handle/PNK/2819
https://doi.org/10.1002/adfm.202103271
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spelling oai:localhost:PNK-28192022-08-17T05:54:49Z Nanoscale Film Thickness Gradients Printed in Open Air by Spatially Varying Chemical Vapor Deposition Abdullah H. Alshehr Jhi Yong Loke Viet Huong Nguyen Alexander Jones Hatameh Asgarimoghaddam Louis-Vincent Delumeau Ahmed Shahin Khaled H. Ibrahim Kissan Mistry Mustafa Yavuz David Mu�oz-Rojas Kevin P. Musselman Nanoscale films are integral to all modern electronics. To optimize device performance, researchers vary the film thickness by making batches of devices, which is time-consuming and produces experimental artifacts. Thin films with nanoscale thickness gradients that are rapidly deposited in open air for combinatorial and high-throughput (CHT) studies are presented. Atmospheric pressure spatial atomic layer deposition reactor heads are used to produce spatially varying chemical vapor deposition rates on the order of angstroms per second. ZnO and Al2O3 films are printed with nm-scale thickness gradients in as little as 45 s and CHT analysis of a metal-insulator-metal diode and perovskite solar cell is performed. By testing 360 Pt/Al2O3/Al diodes with 18 different Al2O3 thicknesses on one wafer, a thicker insulator layer (?7.0 nm) is identified for optimal diode performance than reported previously. Al2O3 thin film encapsulation is deposited by atmospheric pressure chemical vapor deposition (AP-CVD) on a perovskite solar cell stack for the first time and a convolutional neural network is developed to analyze the perovskite stability. The rapid nature of AP-CVD enables thicker films to be deposited at a higher temperature than is practical with conventional methods. The CHT analysis shows enhanced stability for 70 nm encapsulation films. 2021-09-13T04:24:47Z 2021-09-13T04:24:47Z 2021 Bài trích https://onlinelibrary.wiley.com/doi/10.1002/adfm.202103271 https://dlib.phenikaa-uni.edu.vn/handle/PNK/2819 https://doi.org/10.1002/adfm.202103271 eng Advanced Functional Materials
institution Digital Phenikaa
collection Digital Phenikaa
language eng
description Nanoscale films are integral to all modern electronics. To optimize device performance, researchers vary the film thickness by making batches of devices, which is time-consuming and produces experimental artifacts. Thin films with nanoscale thickness gradients that are rapidly deposited in open air for combinatorial and high-throughput (CHT) studies are presented. Atmospheric pressure spatial atomic layer deposition reactor heads are used to produce spatially varying chemical vapor deposition rates on the order of angstroms per second. ZnO and Al2O3 films are printed with nm-scale thickness gradients in as little as 45 s and CHT analysis of a metal-insulator-metal diode and perovskite solar cell is performed. By testing 360 Pt/Al2O3/Al diodes with 18 different Al2O3 thicknesses on one wafer, a thicker insulator layer (?7.0 nm) is identified for optimal diode performance than reported previously. Al2O3 thin film encapsulation is deposited by atmospheric pressure chemical vapor deposition (AP-CVD) on a perovskite solar cell stack for the first time and a convolutional neural network is developed to analyze the perovskite stability. The rapid nature of AP-CVD enables thicker films to be deposited at a higher temperature than is practical with conventional methods. The CHT analysis shows enhanced stability for 70 nm encapsulation films.
format Bài trích
author Abdullah H. Alshehr
Jhi Yong Loke
Viet Huong Nguyen
Alexander Jones
Hatameh Asgarimoghaddam
Louis-Vincent Delumeau
Ahmed Shahin
Khaled H. Ibrahim
Kissan Mistry
Mustafa Yavuz
David Mu�oz-Rojas
Kevin P. Musselman
spellingShingle Abdullah H. Alshehr
Jhi Yong Loke
Viet Huong Nguyen
Alexander Jones
Hatameh Asgarimoghaddam
Louis-Vincent Delumeau
Ahmed Shahin
Khaled H. Ibrahim
Kissan Mistry
Mustafa Yavuz
David Mu�oz-Rojas
Kevin P. Musselman
Nanoscale Film Thickness Gradients Printed in Open Air by Spatially Varying Chemical Vapor Deposition
author_facet Abdullah H. Alshehr
Jhi Yong Loke
Viet Huong Nguyen
Alexander Jones
Hatameh Asgarimoghaddam
Louis-Vincent Delumeau
Ahmed Shahin
Khaled H. Ibrahim
Kissan Mistry
Mustafa Yavuz
David Mu�oz-Rojas
Kevin P. Musselman
author_sort Abdullah H. Alshehr
title Nanoscale Film Thickness Gradients Printed in Open Air by Spatially Varying Chemical Vapor Deposition
title_short Nanoscale Film Thickness Gradients Printed in Open Air by Spatially Varying Chemical Vapor Deposition
title_full Nanoscale Film Thickness Gradients Printed in Open Air by Spatially Varying Chemical Vapor Deposition
title_fullStr Nanoscale Film Thickness Gradients Printed in Open Air by Spatially Varying Chemical Vapor Deposition
title_full_unstemmed Nanoscale Film Thickness Gradients Printed in Open Air by Spatially Varying Chemical Vapor Deposition
title_sort nanoscale film thickness gradients printed in open air by spatially varying chemical vapor deposition
publisher Advanced Functional Materials
publishDate 2021
url https://onlinelibrary.wiley.com/doi/10.1002/adfm.202103271
https://dlib.phenikaa-uni.edu.vn/handle/PNK/2819
https://doi.org/10.1002/adfm.202103271
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