Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles

This paper reports a novel way for the synthesis of Ge-doped ZnO particles by a mechanically milled Ge and ZnO powder mixture (ZnO:Ge) followed by thermal annealing in Ar + 5%H2 to achieve near-band-edge (NBE) emission of ZnO with controllable intensities. The Ge-doped ZnO particles were synthesized...

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Tác giả chính: HN Van
Đồng tác giả: CX Thang
Nhà xuất bản: 2020
Truy cập trực tuyến:https://dlib.phenikaa-uni.edu.vn/handle/PNK/188
https://elibrary.ru/item.asp?id=38592099
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Tóm tắt:This paper reports a novel way for the synthesis of Ge-doped ZnO particles by a mechanically milled Ge and ZnO powder mixture (ZnO:Ge) followed by thermal annealing in Ar + 5%H2 to achieve near-band-edge (NBE) emission of ZnO with controllable intensities. The Ge-doped ZnO particles were synthesized by mechanical milling of a ZnO and Ge powder mixture up to 50 h in particularly, using different ZnO:Ge ratios and annealing temperatures. The Ge-doped ZnO particles were observed to have a rounded morphology with a diameter of ~500 nm when an annealing temperature of 1000°C was used. The Ge-doped ZnO particles showed NBE emission of ~380 nm with a suppressed visible band of ~500 nm as a function of the Ge content and annealing temperatures. These results suggest that the current method is very useful for synthesis of Ge-doped ZnO particles to obtain NBE emission, which is of particular importance for potential application in the optoelectronic and UV detector field.