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Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles

This paper reports a novel way for the synthesis of Ge-doped ZnO particles by a mechanically milled Ge and ZnO powder mixture (ZnO:Ge) followed by thermal annealing in Ar + 5%H2 to achieve near-band-edge (NBE) emission of ZnO with controllable intensities. The Ge-doped ZnO particles were synthesized...

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Main Author: HN Van
Other Authors: CX Thang
Published: 2020
Online Access:https://dlib.phenikaa-uni.edu.vn/handle/PNK/188
https://elibrary.ru/item.asp?id=38592099
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spelling oai:localhost:PNK-1882022-08-17T05:54:39Z Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles HN Van CX Thang TTH Tam VTN Minh VH Pham This paper reports a novel way for the synthesis of Ge-doped ZnO particles by a mechanically milled Ge and ZnO powder mixture (ZnO:Ge) followed by thermal annealing in Ar + 5%H2 to achieve near-band-edge (NBE) emission of ZnO with controllable intensities. The Ge-doped ZnO particles were synthesized by mechanical milling of a ZnO and Ge powder mixture up to 50 h in particularly, using different ZnO:Ge ratios and annealing temperatures. The Ge-doped ZnO particles were observed to have a rounded morphology with a diameter of ~500 nm when an annealing temperature of 1000°C was used. The Ge-doped ZnO particles showed NBE emission of ~380 nm with a suppressed visible band of ~500 nm as a function of the Ge content and annealing temperatures. These results suggest that the current method is very useful for synthesis of Ge-doped ZnO particles to obtain NBE emission, which is of particular importance for potential application in the optoelectronic and UV detector field. 2020-04-29T07:52:01Z 2020-04-29T07:52:01Z bccb00122 https://dlib.phenikaa-uni.edu.vn/handle/PNK/188 https://elibrary.ru/item.asp?id=38592099 application/pdf
institution Digital Phenikaa
collection Digital Phenikaa
description This paper reports a novel way for the synthesis of Ge-doped ZnO particles by a mechanically milled Ge and ZnO powder mixture (ZnO:Ge) followed by thermal annealing in Ar + 5%H2 to achieve near-band-edge (NBE) emission of ZnO with controllable intensities. The Ge-doped ZnO particles were synthesized by mechanical milling of a ZnO and Ge powder mixture up to 50 h in particularly, using different ZnO:Ge ratios and annealing temperatures. The Ge-doped ZnO particles were observed to have a rounded morphology with a diameter of ~500 nm when an annealing temperature of 1000°C was used. The Ge-doped ZnO particles showed NBE emission of ~380 nm with a suppressed visible band of ~500 nm as a function of the Ge content and annealing temperatures. These results suggest that the current method is very useful for synthesis of Ge-doped ZnO particles to obtain NBE emission, which is of particular importance for potential application in the optoelectronic and UV detector field.
author2 CX Thang
author_facet CX Thang
HN Van
author HN Van
spellingShingle HN Van
Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles
author_sort HN Van
title Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles
title_short Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles
title_full Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles
title_fullStr Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles
title_full_unstemmed Near-band-edge emission of mechanically milled and thermally annealed ZnO:Ge particles
title_sort near-band-edge emission of mechanically milled and thermally annealed zno:ge particles
publishDate 2020
url https://dlib.phenikaa-uni.edu.vn/handle/PNK/188
https://elibrary.ru/item.asp?id=38592099
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score 8.893527

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