High-quality optically defect-free 1D ZnS nanostructures by a modified thermal evaporation method
ZnS has great potential as a valuable material for nanoscale devices because of its rich morphologies and unique structure. Although much effort has been made, the growth of high-quality ZnS crystal is still a challenge. In this paper, high-quality optically defect-free 1D ZnS nanostructures, includ...
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| Tác giả chính: | , , , |
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| Định dạng: | Bài trích |
| Ngôn ngữ: | English |
| Nhà xuất bản: |
Elsevier
2022
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| Chủ đề: | |
| Truy cập trực tuyến: | https://www.sciencedirect.com/science/article/abs/pii/S0925346721011630?via%3Dihub https://dlib.phenikaa-uni.edu.vn/handle/PNK/5722 https://doi.org/10.1016/j.optmat.2021.111963 |
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| Tóm tắt: | ZnS has great potential as a valuable material for nanoscale devices because of its rich morphologies and unique structure. Although much effort has been made, the growth of high-quality ZnS crystal is still a challenge. In this paper, high-quality optically defect-free 1D ZnS nanostructures, including nanorods, nanowires, and nanobelts, were successfully synthesized on a large scale by a modified thermal evaporation method. XRD patterns and HRTEM images indicated that the ZnS nanostructures are single phases with hexagonal structures. Under optical excitation, all the ZnS nanostructures show intense UV emissions and almost no defect emissions at room temperature. Sharp UV lasing-like peaks with the FWHM as narrow as 2–3 nm are achieved for the ZnS nanobelts and nanowires. The optical transition from free exciton A, free exciton B, and their associated LO phonon replicas were determined from the evolution of the NBE emissions. These high-quality nanostructures are envisaged to be highly promising for high-efficiency light-emitting devices and lasers in the UV region |
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