Staff View: Open-air printing of Cu2O thin films with high hole mobility for semitransparent solar harvesters

Open-air printing of Cu2O thin films with high hole mobility for semitransparent solar harvesters

Cu2O is a promising p-type semiconductor for low-cost photovoltaics and transparent optoelectronics. However, low-cost and low-temperature fabrication of Cu2O films with good transport properties remains challenging, thus limiting their widespread adoption in devices. Here, we report Cu2O thin films...

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Main Authors:	Abderrahime Sekkat, Viet Huong Nguyen, César Arturo Masse de La Huerta, Laetitia Rapenne, Daniel Bellet, Anne Kaminski-Cachopo, Guy Chichignoud, David Muñoz-Rojas
Format:	Bài trích
Language:	eng
Published:	Communications Materials 2021
Subjects:	Semiconductors Materials for energy and catalysis
Online Access:	https://www.nature.com/articles/s43246-021-00181-8 https://dlib.phenikaa-uni.edu.vn/handle/PNK/2848 https://doi.org/10.1038/s43246-021-00181-8
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spelling	oai:localhost:PNK-28482022-08-17T05:54:48Z Open-air printing of Cu2O thin films with high hole mobility for semitransparent solar harvesters Abderrahime Sekkat Viet Huong Nguyen César Arturo Masse de La Huerta Laetitia Rapenne Daniel Bellet Anne Kaminski-Cachopo Guy Chichignoud David Muñoz-Rojas Semiconductors Materials for energy and catalysis Cu2O is a promising p-type semiconductor for low-cost photovoltaics and transparent optoelectronics. However, low-cost and low-temperature fabrication of Cu2O films with good transport properties remains challenging, thus limiting their widespread adoption in devices. Here, we report Cu2O thin films of 20–80 nm thickness with hole mobility up to 92 cm2V−1s−1 using atmospheric-pressure spatial atomic layer deposition at temperatures below 260 °C, from a copper (I) hexafluoro-2,4-pentanedionate cyclooctadiene precursor. Raman spectroscopy indicates the presence of copper split vacancies and shows that the high hole mobility can be correlated to a low concentration of shallow acceptor defects. The optical bandgap of deposited films can be tuned between 2.08 eV and 2.5 eV, depending on the deposition temperature. All-oxide semitransparent Cu2O/ZnO solar harvesters are fabricated, showing efficiency values comparable to devices that incorporate much thicker Cu2O layers. Our work provides a promising approach towards cost-efficient, all-oxide solar harvesters, and for other (opto)electronic devices. 2021-09-14T07:14:53Z 2021-09-14T07:14:53Z 2021 Bài trích https://www.nature.com/articles/s43246-021-00181-8 https://dlib.phenikaa-uni.edu.vn/handle/PNK/2848 https://doi.org/10.1038/s43246-021-00181-8 eng application/pdf Communications Materials
institution	Digital Phenikaa
collection	Digital Phenikaa
language	eng
topic	Semiconductors Materials for energy and catalysis
spellingShingle	Semiconductors Materials for energy and catalysis Abderrahime Sekkat Viet Huong Nguyen César Arturo Masse de La Huerta Laetitia Rapenne Daniel Bellet Anne Kaminski-Cachopo Guy Chichignoud David Muñoz-Rojas Open-air printing of Cu2O thin films with high hole mobility for semitransparent solar harvesters
description	Cu2O is a promising p-type semiconductor for low-cost photovoltaics and transparent optoelectronics. However, low-cost and low-temperature fabrication of Cu2O films with good transport properties remains challenging, thus limiting their widespread adoption in devices. Here, we report Cu2O thin films of 20–80 nm thickness with hole mobility up to 92 cm2V−1s−1 using atmospheric-pressure spatial atomic layer deposition at temperatures below 260 °C, from a copper (I) hexafluoro-2,4-pentanedionate cyclooctadiene precursor. Raman spectroscopy indicates the presence of copper split vacancies and shows that the high hole mobility can be correlated to a low concentration of shallow acceptor defects. The optical bandgap of deposited films can be tuned between 2.08 eV and 2.5 eV, depending on the deposition temperature. All-oxide semitransparent Cu2O/ZnO solar harvesters are fabricated, showing efficiency values comparable to devices that incorporate much thicker Cu2O layers. Our work provides a promising approach towards cost-efficient, all-oxide solar harvesters, and for other (opto)electronic devices.
format	Bài trích
author	Abderrahime Sekkat Viet Huong Nguyen César Arturo Masse de La Huerta Laetitia Rapenne Daniel Bellet Anne Kaminski-Cachopo Guy Chichignoud David Muñoz-Rojas
author_facet	Abderrahime Sekkat Viet Huong Nguyen César Arturo Masse de La Huerta Laetitia Rapenne Daniel Bellet Anne Kaminski-Cachopo Guy Chichignoud David Muñoz-Rojas
author_sort	Abderrahime Sekkat
title	Open-air printing of Cu2O thin films with high hole mobility for semitransparent solar harvesters
title_short	Open-air printing of Cu2O thin films with high hole mobility for semitransparent solar harvesters
title_full	Open-air printing of Cu2O thin films with high hole mobility for semitransparent solar harvesters
title_fullStr	Open-air printing of Cu2O thin films with high hole mobility for semitransparent solar harvesters
title_full_unstemmed	Open-air printing of Cu2O thin films with high hole mobility for semitransparent solar harvesters
title_sort	open-air printing of cu2o thin films with high hole mobility for semitransparent solar harvesters
publisher	Communications Materials
publishDate	2021
url	https://www.nature.com/articles/s43246-021-00181-8 https://dlib.phenikaa-uni.edu.vn/handle/PNK/2848 https://doi.org/10.1038/s43246-021-00181-8
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score	8.891145

Open-air printing of Cu2O thin films with high hole mobility for semitransparent solar harvesters

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