Open-air printing of Cu2O thin films with high hole mobility for semitransparent solar harvesters

Cu2O is a promising p-type semiconductor for low-cost photovoltaics and transparent optoelectronics. However, low-cost and low-temperature fabrication of Cu2O films with good transport properties remains challenging, thus limiting their widespread adoption in devices. Here, we report Cu2O thin films...

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Tác giả chính: Abderrahime Sekkat, Viet Huong Nguyen, César Arturo Masse de La Huerta, Laetitia Rapenne, Daniel Bellet, Anne Kaminski-Cachopo, Guy Chichignoud, David Muñoz-Rojas
Định dạng: Bài trích
Ngôn ngữ:eng
Nhà xuất bản: Communications Materials 2021
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Truy cập trực tuyến:https://www.nature.com/articles/s43246-021-00181-8
https://dlib.phenikaa-uni.edu.vn/handle/PNK/2848
https://doi.org/10.1038/s43246-021-00181-8
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Tóm tắt:Cu2O is a promising p-type semiconductor for low-cost photovoltaics and transparent optoelectronics. However, low-cost and low-temperature fabrication of Cu2O films with good transport properties remains challenging, thus limiting their widespread adoption in devices. Here, we report Cu2O thin films of 20–80 nm thickness with hole mobility up to 92 cm2V−1s−1 using atmospheric-pressure spatial atomic layer deposition at temperatures below 260 °C, from a copper (I) hexafluoro-2,4-pentanedionate cyclooctadiene precursor. Raman spectroscopy indicates the presence of copper split vacancies and shows that the high hole mobility can be correlated to a low concentration of shallow acceptor defects. The optical bandgap of deposited films can be tuned between 2.08 eV and 2.5 eV, depending on the deposition temperature. All-oxide semitransparent Cu2O/ZnO solar harvesters are fabricated, showing efficiency values comparable to devices that incorporate much thicker Cu2O layers. Our work provides a promising approach towards cost-efficient, all-oxide solar harvesters, and for other (opto)electronic devices.